The Probabilistic Model of Random Variation in Nanoscale MOSFET’s High Frequency Performance

In this research, the probabilistic model of the random variations in nanoscale MOSFET’s high frequency performance defined in term of variation in gate capacitance, has been proposed. Both random dopant fluctuation and process variation effects which are the major causes of the MOSFET’s high frequency characteristic variations have been taken into account. The nanoscale MOSFET equation has been used as the mathematical basis instead of the conventional square law. The proposed model has been verified based on the 65nm CMOS technology by using the Monte Carlo SPICE simulations of the benchmark circuits and the Kolmogorov-Smirnof goodness of fit tests. They are very accurate since they can fit the Monte Carlo SPICE based data and distributions with 99% confidence. Hence, the proposed models have been found to be the potential mathematical tool for the statistical/variability aware analysis /design of various nanoscale MOSFET based high frequency applications. Key-Words: gate capacitance, high frequency, nanoscale MOSFET, statistical design, random variation, variability aware design.